Silicon on Insulator (SOI) פרוסות
:Typical Specification
Diameter: 3-Inch (76.2mm), 100mm, 125mm, 150mm, 200mm
Device-Layer: 380nm – 100μm
Box-Layer: 100nm – 10μm
Handle-Layer: 300μm – 775μm
Bonding Methods: Direct-Bonding, Epi-Layer-Transfer, Oxygen Implantation
Other Materials
SOG, GOS